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參數(shù)資料
| 型號： | HGT1S3N60C3DS |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 273K |
| 代理商： | HGT1S3N60C3DS |
3
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
I
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
8
10
12
0
2
4
8
10
12
14
14
6
16
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
CE
= 10V
4
18
20
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
2
4
6
8
10
12V
V
GE
= 15V
0
2
4
8
10
12
14
6
16
18
20
10V
8.0V
7.5V
9.0V
8.5V
7.0V
T
C
= 25
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= -40
o
C
0
2
4
8
10
12
14
6
16
18
20
I
C
,
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
o
C
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
0
2
4
8
10
12
14
6
16
18
20
T
C
= 150
o
C
T
C
= 25
o
C
25
50
75
100
125
150
0
1
2
3
4
5
I
C
,
T
C
, CASE TEMPERATURE (
o
C)
V
GE
= 15V
7
6
I
S
,
0
20
30
50
t
S
,
μ
S
10
11
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
15
13
60
40
10
I
SC
t
SC
0
4
10
14
V
CE
= 360V, R
G
= 82
, T
J
= 125
o
C
2
6
8
12
70
HGTP3N60C3D, HGT1S3N60C3DS
相關(guān)PDF資料 |
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| HGTP3N60C3D | 6A, 600V, UFS Series N-Channel IGBTs(6A, 600V, UFS系列N溝道絕緣柵雙極型晶體管) |
| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGT1S7N60B3DS | 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
| HGTD2N120CNS | 13A, 1200V, NPT Series N-Channel IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGT1S3N60C3DS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB |
| HGT1S5N120BNDS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes |
| HGT1S5N120BNDS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
| HGT1S5N120BNS | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:21A, 1200V, NPT Series N-Channel IGBTs |
| HGT1S5N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB |
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