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參數(shù)資料
| 型號(hào)： | HFA1113IB |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:Solid; Jacket Color:Purple; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| 中文描述： | BUFFER AMPLIFIER, PDSO8 |
| 文件頁(yè)數(shù)： | 4/22頁(yè) |
| 文件大?。?/td> | 568K |
| 代理商： | HFA1113IB |
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192
Specifications HFA1113/883
Rise and Fall Time
T
R
(-1)
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, to 0.1%, V
OUT
=
2V to
0V
1, 2
+25
o
C
-
750
ps
T
F
(-1)
1, 2
+25
o
C
-
800
ps
T
R
(+1)
1, 2
+25
o
C
-
750
ps
T
F
(+1)
1, 2
+25
o
C
-
750
ps
T
R
(+2)
1, 2
+25
o
C
-
1000
ps
T
F
(+2)
1, 2
+25
o
C
-
1000
ps
Overshoot
+OS(-1)
1, 3
+25
o
C
-
30
%
-OS(-1)
1, 3
+25
o
C
-
25
%
+OS(+1)
1, 3
+25
o
C
-
65
%
-OS(+1)
1, 3
+25
o
C
-
60
%
+OS(+2)
1, 3
+25
o
C
-
20
%
-OS(+2)
1, 3
+25
o
C
-
20
%
Settling Time
TS(0.1)
1
+25
o
C
-
20
ns
TS(0.05)
A
V
= +2, to 0.05%,
V
OUT
=
2V to 0V
1
+25
o
C
-
33
ns
2nd Harmonic Distortion
HD2(30)
A
V
= +2, f = 30MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-45
dBc
HD2(50)
A
V
= +2, f = 50MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-40
dBc
HD2(100)
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-35
dBc
3rd Harmonic Distortion
HD3(30)
A
V
= +2, f = 30MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-65
dBc
HD3(50)
A
V
= +2, f = 50MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-55
dBc
HD3(100)
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
1
+25
o
C
-
-45
dBc
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for A
V
= +1. Please refer to
Performance Curves.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Characterized at: V
SUPPLY
=
±
5V, R
L
= 1
00
, Unless Otherwise Specified.
PARAMETERS
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
511106-883
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HFA1113IBZ | 功能描述:運(yùn)算放大器 - 運(yùn)放 W/ANNEAL BUFR 850MHZ CFB PRG-GAIN CLMP RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| HFA1113IBZ96 | 功能描述:運(yùn)算放大器 - 運(yùn)放 W/ANNEAL BUFR 850MHZ CFB PRG-GAIN CLMP RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| HFA1113IP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HFA1113MJ/883 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HFA1113ML/883 | 制造商:Intersil Corporation 功能描述:SP AMP BFFR AMP SGL 20CLCC - Rail/Tube |
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