參數(shù)資料
型號: HF75-28S
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: HF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.380 INCH, STUD PACKAGE-4
文件頁數(shù): 1/1頁
文件大小: 17K
代理商: HF75-28S
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 50 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
UNITS
V
BV
CER
I
C
= 50 mA
R
BE
= 10
60
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
E
= 28 V
5
mA
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
10
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
80
pF
G
PE
IMD
3
V
CE
= 25 V
P
REF
= 16 W Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
I
CQ
= 3.2 A f = 225 MHz
13.5
14.5
-55
dB
dBc
NPN SILICON RF POWER TRANSISTOR
HF75-28S
DESCRIPTION:
The
ASI HF75-28S
is Designed for
FEATURES:
P
G
= 18 dB min. at 75 W/30 MHz
IMD
3
= -30 dBc max. at 75 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
q
JC
10 A
60 V
35 V
140 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.05
O
C/W
PACKAGE STYLE .380 STUD
ORDER CODE: ASI10607
MINIMUM
inches / mm
.004 / 0.10
.320 / 8.13
.100 / 2.54
.370 / 9.40
B
C
D
E
F
G
H
I
J
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
.090 / 2.29
.155 / 3.94
.100 / 2.54
.175 / 4.45
.750 / 19.05
DIM
.220 / 5.59
.980 / 24.89
.230 / 5.84
.490 / 12.45
.450 / 11.43
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E
E
C
B
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