參數(shù)資料
型號: HF8-28S
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.380 INCH, STUD PACKAGE-4
文件頁數(shù): 1/1頁
文件大小: 17K
代理商: HF8-28S
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 200 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
UNITS
V
BV
CES
I
C
= 200 mA
65
V
BV
CEO
I
C
= 200 mA
35
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CBO
V
CB
= 30 V
1.0
mA
h
FE
V
CE
= 5.0 V I
C
= 200 mA
5.0
---
---
C
OB
V
CB
= 30 V
f = 1.0 MHz
15
pF
G
P
V
CC
= 28 V
P
IN
= 1.0 W f = 150 MHz
10
dB
NPN SILICON RF POWER TRANSISTOR
HF8-28S
DESCRIPTION:
The
ASI HF8-28S
is Designed for
FEATURES:
·
P
G
= 21 dB min. at 8 W/30 MHz
·
IMD
3
= -30 dBc max. at 8 W
(PEP)
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
q
JC
1.0 A
65 V
35 V
65 V
4.0 V
13.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
13.5
O
C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10601
MINIMUM
inches / mm
.004 / 0.10
.320 / 8.13
.100 / 2.54
.370 / 9.40
B
C
D
E
F
G
H
I
J
A
MAXIMUM
inches / mm
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
.090 / 2.29
.155 / 3.94
.100 / 2.54
.175 / 4.45
.750 / 19.05
DIM
.220 / 5.59
.980 / 24.89
.230 / 5.84
.490 / 12.45
.450 / 11.43
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
E
E
C
B
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