參數(shù)資料
型號(hào): HF50-12
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 1/1頁(yè)
文件大小: 18K
代理商: HF50-12
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
UNITS
V
BV
CEO
I
C
= 100 mA
18
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
CE
= 15 V
10
mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A
20
---
C
ob
V
CB
= 12.5 V f = 1.0 MHz
200
pF
G
PE
h
IMD
V
CC
= 12.5 V I
CQ
= 50 mA P
OUT
= 50 W
(
PEP
)
f = 30 MHz
15
16
55
-30
dB
%
dB
NPN SILICON RF POWER TRANSISTOR
HF50-12
DESCRIPTION:
The
HF50-12
is Designed for 12.5 Volt
Class AB and Class C Power Amplifier
Applications Operating in the 2 to 32
MHz HF Band.
FEATURES INCLUDE:
High Gain, 16 dB Typical @ 30 MHz
Emitter Ballasting
Withstands Severe Mismatch
MAXIMUM RATINGS
I
C
10 A
V
CB
36 V
V
CE
18 V
V
EB
4.0 V
P
DISS
175 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +150
O
C
1.0
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
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