參數(shù)資料
型號: HDD32M72B18RW-13B
廠商: Hanbit Electronics Co.,Ltd.
英文描述: DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register
中文描述: 256MB的DDR SDRAM內(nèi)存模塊(32Mx72bit),在16Mx8,4Banks,4K的參考依據(jù)。,184Pin與鎖相環(huán)內(nèi)存
文件頁數(shù): 10/12頁
文件大小: 169K
代理商: HDD32M72B18RW-13B
HANBit
HDD32M72B18RPW
URL : www.hbe.co.kr 10 HANBit Electronics Co.,Ltd.
REV 1.0 (August.2002)
SIMPLIFIED TRUTH TABLE
COMMAND
CK
E
n-1
H
H
CK
E
n
X
X
H
L
/CS
/R
A
S
L
L
/C
A
S
L
L
/WE
DM
BA
0,1
A10/
AP
A11,A12
A9~A0
NOTE
Register
Register
Extended MRS
Mode register set
Auto refresh
L
L
L
L
X
X
OP code
OP code
1,2
1,2
3
3
3
3
Entry
H
L
L
L
H
X
X
L
H
L
H
X
L
H
X
H
H
X
H
Refresh
Self
refresh
Exit
L
H
X
X
Bank active & row addr.
Auto
disable
column
address
Auto precharge eable
Auto
disable
column
address
enable
Burst Stop
Bank selection
Precharg
e
All banks
H
X
X
V
Row address
precharge
L
4
Read &
H
X
L
H
L
H
X
V
H
Column
Address
(A0 ~A9)
4
precharge
H
L
4
Write &
Auto
precharge
H
X
L
H
L
L
X
V
H
Column
Address
(A0 ~ A9)
4,6
H
X
L
H
H
L
X
X
7
5
8
V
X
L
H
H
X
L
L
H
L
X
X
H
L
X
H
L
H
L
X
V
X
X
H
X
V
X
X
V
X
X
H
X
V
X
V
X
X
H
X
V
Entry
H
L
X
Clock suspend or
active power down
Exit
L
H
X
X
Entry
H
L
X
Precharge power
down mode
Exit
L
H
X
X
DM
H
V
X
H
L
X
H
X
H
X
H
No operation command
H
X
X
X
(V=Valid, X=Don't care, H=Logic high, L=Logic low)
Notes :
1. OP Code : Operand code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at t
RP
after the end of burst.
6. Burst stop command is valid at every burst length.
7. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges
(Write DM latency is 0)
相關PDF資料
PDF描述
HDD32M72B18RWP-10A DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register
HDD32M72D18RPW DDR SDRAM Module 256Mbyte (32Mx72bit), based on 16Mx8, 4Banks, 4K Ref., 184Pin-DIMM with PLL & Register
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HDD32M72B9-13A DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM
HDD32M72B9-13B DDR SDRAM Module 256Mbyte (32Mx72bit), based on32Mx8,4Banks, 8K Ref., ECC Unbuffered SO-DIMM
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