參數(shù)資料
型號(hào)： HDD16M64F8-10A
廠商： Hanbit Electronics Co.,Ltd.
英文描述： DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
中文描述： DDR SDRAM內(nèi)存模塊128Mbyte（16Mx64bit）根據(jù)on16Mx8，4Banks，4K的參考。，SMM的，
文件頁數(shù)： 5/11頁
文件大?。?/td> 147K
代理商： HDD16M64F8-10A
HANBit
HDD16M64F8
URL : www.hbe.co.kr 5 HANBit Electronics Co.,Ltd.
REV 1.0(August.2002)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNTE
Voltage on any pin relative to Vss
V
IN
, V
OUT
-o.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to Vss
V
DDQ
-0.5 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
8.0
W
Short circuit current
Notes:
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
I
OS
50
mA
(Recommended operating conditions (Voltage referenced to Vss = 0V, T
A
= 0 to 70
°
C) )
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTE
Supply Voltage
V
DD
2.3
2.7
V
I/O Supply Voltage
V
DDQ
2.3
2.7
V
I/O Reference Voltage
V
REF
1.15
1.35
V
1
I/O Termination Voltage(system)
V
TT
V
REF
–
0.04
V
REF
+ 0.04
V
2
Input High Voltage
V
IH
(DC)
V
REF
+ 0.15
V
REF
+ 0.3
V
Input Low Voltage
V
IL
(DC)
-0.3
V
REF
- 0.15
V
Input Voltage Level, CK and /CK inputs
V
IN
(DC)
-0.3
V
DDQ
+ 0.3
V
Input Differential Voltage, CK and /CK inputs
V
ID
(DC)
0.3
V
DDQ
+ 0.6
V
Input leakage current
I
LI
-2
2
uA
3
Output leakage current
I
OZ
-5
5
uA
Output High current (V
OUT
= 1.95V)
I
OH
-16.8
mA
Output Low current (V
OUT
= 0.35V)
Notes :
1.Typically, the value of V
REF
is expected to be about 0.5* V
DD
of the transmitting device.
V
REF
is expected to track variation in V
DDQ .
2.Peak to peak AC noise on V
REF
may not exceed
2% V
REF
(DC).
3.V
TT
of the transmitting device must track V
REF
of the receiving device.
CAPACITANCE
(V
DD
= min to max, V
DDQ
= 2.5V
to 2.7V, T
A
= 25
°
C, f = 100MHz)
I
OL
16.8
mA
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Input capacitance(A0~A11, BA0~BA1, /RAS, /CAS,/WE)
C
IN1
49
57
pF
Input capacitance(CKE0)
C
IN2
42
50
pF
Input capacitance(/CS0)
C
IN3
42
50
pF
Input capacitance(CLK0, CLK1,CLK2)
C
IN4
22
25
pF
Input capacitance(DM0~DM7)
C
IN5
6
8
pF
Data input/output capacitance (DQ0 ~ DQ63, DQS0~DQS7)
C
OUT1
6
8
pF
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HDD16M64F8-13B 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., SMM,
HDD16M72D9RPW 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register
HDD16M72D9RPW-10A 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register
HDD16M72D9RPW-13A 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with PLL & Register
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