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參數(shù)資料
| 型號： | HDD16M64B8-10A |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| 中文描述： | DDR SDRAM內(nèi)存模塊128Mbyte（16Mx64bit）根據(jù)on16Mx8，4Banks，4K的參考。 SO - DIMM插槽 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 172K |
| 代理商： | HDD16M64B8-10A |
HANBit
HDD16M64B8
URL : www.hbe.co.kr 6 HANBit Electronics Co.,Ltd.
REV 1.0 (August. 2002)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, V
DD
= 2.5V, T =25
°
C)
VERSION
PARAMETER
SYMBOL
TEST
CONDITION
-10A
-13A
-13B
UNIT
NOTE
Operating current
(One bank active)
I
DD1
Burst length = 2
t
RC
≥
t
(min), CL=2.5
I
= 0mA,
Active-Read-Presharge
720
800
800
mA
Precharge standby
current in
power-down mode
I
DD2P
CKE
≤
V
IL
(max)
t
CK
= tCK(min), All banks idle
24
28
28
mA
Precharge standby
current in non power-down
mode
I
DD2N
CKE
≥
V
IH
(min)
/CS
≥
V
IH
(min), t
CK
= tCK(min)
104
104
104
mA
Active standby current in
power-down mode
I
DD3P
All banks idle, CKE
≤
V
IL
(max),
t
CK
= tCK(min)
240
240
240
mA
Active standby current in
non power-down mode
(One bank active)
I
DD3N
Onel banks,
Active-Read-Presharge,
t
RC
= t
RAS
(max), t
CK
= tCK(min)
328
360
360
mA
CL=2.5
Operating current (Read)
I
DD4R
Burst length = 2
t
RC
= t
RC
(min),
I
OUT
= 0mA,
CL=2
1040
1200
1200
mA
CL=2.5
Operating current(Write)
I
DD4W
Burst length = 2
t
RC
= t
RC
(min)
CL=2
1040
1240
1240
mA
Auto refresh current
I
DD5
t
RC
≥
t
REF
(min)
1200
1440
1440
mA
Normal
16
16
16
mA
Self refresh
current
Low
Power
I
DD6
CKE
≤
0.2V
80
8
8
mA
Notes:
Operation at above absolute maximum rating can adversely affect device reliability
AC OPERATING CONDITIONS
PARAMETER
STMBOL
MIN
MAX
UNIT
NOTE
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V
IH
(AC)
VREF + 0.35
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
V
IL
(AC)
VREF - 0.35
V
Input Differential Voltage, CK and CK inputs
V
ID
(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
Notes:
1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of V
IX
is expected to equal 0.5* V
DDQ
of the transmitting device and must track variations in the DC level
of the same
V
IX
(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HDD16M64B8-13A | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| HDD16M64B8-13B | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| HDD16M64D8W | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-10A | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-13A | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HDD16M64B8-13A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| HDD16M64B8-13B | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| HDD16M64D8W | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-10A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-13A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
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