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參數(shù)資料
| 型號： | HDD16M64B8-10A |
| 廠商： | Hanbit Electronics Co.,Ltd. |
| 英文描述： | DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| 中文描述： | DDR SDRAM內存模塊128Mbyte（16Mx64bit）根據(jù)on16Mx8，4Banks，4K的參考。 SO - DIMM插槽 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 172K |
| 代理商： | HDD16M64B8-10A |
HANBit
HDD16M64B8
URL : www.hbe.co.kr 5 HANBit Electronics Co.,Ltd.
REV 1.0 (August. 2002)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNTE
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
supply relative to Vss
V
DD
-1.0 ~ 3.6
V
Voltage on V
DDQ
supply relative to Vss
V
DDQ
-0.5 ~ 3.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
8.0
W
Short circuit current
Notes:
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to Vss = 0V, T
A
= 0 to 70
°
C) )
I
OS
50
mA
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTE
Supply Voltage
V
DD
2.3
2.7
V
I/O Supply Voltage
V
DDQ
2.3
2.7
V
I/O Reference Voltage
V
REF
1.15
1.35
V
1
I/O Termination Voltage(system)
V
TT
V
REF
–
0.04
V
REF
+ 0.04
V
2
Input High Voltage
V
IH
(DC)
V
REF
+ 0.15
V
REF
+ 0.3
V
Input Low Voltage
V
IL
(DC)
-0.3
V
REF
- 0.15
V
Input Voltage Level, CK and /CK inputs
V
IN
(DC)
-0.3
V
DDQ
+ 0.3
V
Input Differential Voltage, CK and /CK inputs
V
ID
(DC)
0.3
V
DDQ
+ 0.6
V
Input leakage current
I
LI
-2
2
uA
3
Output leakage current
I
OZ
-5
5
uA
Output High current (V
OUT
= 1.95V)
I
OH
-16.8
mA
Output Low current (V
OUT
= 0.35V)
Notes :
1.Typically, the value of V
is expected to be about 0.5* V
DD
of the transmitting device.
V
REF
is expected to track variation in V
DDQ .
2. Peak to peak AC noise on V
may not exceed
2% V
(DC).
3. V
TT
of the transmitting device must track V
REF
of the receiving device.
CAPACITANCE
(V
DD
= min to max, V
DDQ
= 2.5V
to 2.7V, T
A
= 25
°
C, f = 100MHz)
I
OL
16.8
mA
DESCRIPTION
SYMBO
L
MIN
MAX
UNITS
Input capacitance(A0~A11, BA0~BA1, /RAS, /CAS,/WE)
C
IN1
36
44
pF
Input capacitance(CKE0,CKE1)
C
IN2
36
44
pF
Input capacitance(/CS0)
C
IN3
34
42
pF
Input capacitance(CK0~CK2, /CK0~/CK2)
C
IN4
34
38
pF
Input capacitance(DM0~DM7)
C
IN5
8
9
pF
Data input/output capacitance (DQ0 ~ DQ63, DQS0~DQS7)
C
OUT1
8
9
pF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HDD16M64B8-13A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| HDD16M64B8-13B | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref. SO-DIMM |
| HDD16M64D8W | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-10A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
| HDD16M64D8W-13A | 制造商:HANBIT 制造商全稱:Hanbit Electronics Co.,Ltd 功能描述:DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, |
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