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參數資料
| 型號： | HCS32DMSR |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | Radiation Hardened Quad 2-Input OR Gate |
| 中文描述： | HC/UH SERIES, QUAD 2-INPUT OR GATE, CDIP14 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 179K |
| 代理商： | HCS32DMSR |
75
Specifications HCS32MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Input to Output
TPHL
VCC = 4.5V
9
+25
o
C
2
18
ns
10, 11
+125
o
C, -55
o
C
2
20
ns
Data to Output
TPLH
VCC = 4.5V
9
+25
o
C
2
20
ns
10, 11
+125
o
C, -55
o
C
2
22
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
6
pF
1
+125
o
C, -55
o
C
-
11
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25
o
C
-
10
pF
1
+125
o
C
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25
o
C
-
15
ns
1
+125
o
C
-
22
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25
o
C
-
0.2
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25
o
C
4.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25
o
C
-4.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC), VIL = 0.30(VCC),
IOL = 50
μ
A
+25
o
C
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC), VIL = 0.30(VCC),
IOH = -50
μ
A
+25
o
C
VCC
-0.1
-
V
Spec Number
518768
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