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參數(shù)資料
| 型號： | HB52F649E1 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| 中文描述： | 注冊使用512 MB SDRAM的內(nèi)存64 Mword】72位，133 MHz內(nèi)存總線，1銀模塊（18件64 M】4組件）PC133SDRAM |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 143K |
| 代理商： | HB52F649E1 |
HB52F649E1-75B
Data Sheet E0021H10
12
AC Characteristics
(Ta = 0 to 55
°
C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V) (cont)
HB52F649E1-75B
PC133
CE
latency = 4
PC100
CE
latency = 3
Parameter
Symbol
PC100
Symbol Min
Max
Min
Max
Unit
Notes
Command setup time
t
CS
t
CH
t
RC
Tsi
1.9
—
2.6
—
ns
1
Command hold time
Thi
1.5
—
1.6
—
ns
1, 5
Ref/Active to Ref/Active command
period
Trc
67.5
—
70
—
ns
1
Active to precharge command period t
RAS
Active command to column
command (same bank)
Tras
45
120000 50
120000 ns
1
t
RCD
Trcd
20
—
20
—
ns
1
Precharge to active command period t
RP
Write recovery or data-in to
precharge lead time
Trp
20
—
20
—
ns
1
t
DPL
Tdpl
7.5
—
10
—
ns
1
Active (a) to Active (b) command
period
t
RRD
Trrd
15
—
20
—
ns
1
Transition time (rise to fall)
t
T
t
REF
1
5
1
5
ns
Refresh period
Notes: 1. AC measurement assumes t
T
= 1 ns. Reference level for timing of input signals is 1.5 V.
2. Access time is measured at 1.5 V. Load condition is C
L
= 50 pF.
3. t
LZ
(min) defines the time at which the outputs achieves the low impedance state.
4. t
HZ
(max) defines the time at which the outputs achieves the high impedance state.
5. t
CES
defines CKE setup time to CK rising edge except power down exit command.
—
64
—
64
ms
Test Conditions
Input and output timing reference levels: 1.5 V
Input waveform and output load: See following figures
t
T
2.4 V
0.4 V0.8 V
2.0 V
input
t
T
DQ
CL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HB52F649E1-75B | 512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649E1 | 512 MB Registered SDRAM DIMM(512 MB 寄存同步DRAM DIMM) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HB52F649E1-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Registered SDRAM DIMM 64-Mword 】 72-bit, 133 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M 】 4 Components) PC133SDRAM |
| HB52F649EN-75B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512 MB Unbuffered SDRAM DIMM, 133 MHz Memory Bus PC133 SDRAM |
| HB52R1289E22 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-A6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
| HB52R1289E22-B6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM |
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