參數(shù)資料
型號(hào)： HB52F169EN
廠商： Hitachi,Ltd.
英文描述： 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
中文描述： 64 MB的無(wú)緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存）
文件頁(yè)數(shù)： 46/71頁(yè)
文件大?。?/td> 906K
代理商： HB52F169EN
HB52F88EM-75F, HB52F89EM-75F, HB52F168EN-75F, HB52F169EN-
46
Burst Write (Burst Length = 4)
Single Write
Full-page Burst Stop
Burst stop command during burst read:
The burst stop (BST) command is used to stop data output during
a full-page burst. The BST command sets the output buffer to High-Z and stops the full-page burst read. The
timing from command input to the last data changes depending on the CE latency setting. In addition, the
BST command is valid only during full-page burst mode, and is illegal with burst lengths 1, 2, 4 and 8.
CE latency
2
3
BST to valid data
1
2
BST to high impedance
2
3
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in0
in1
in2
in3
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
CK
Command
Din
l
APW
I
RAS
ACTV
WRIT A
in
ACTV
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of t
RAS
(l
RAS
) is required between previous active (ACTV) command
and internal precharge " ".
相關(guān)PDF資料
PDF描述
HB52F89EM 64 MB Unbuffered SDRAM DIMM(64 MB 未緩沖同步DRAM DIMM)
HB52R1289E22 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-A6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22-B6B 1 GB Registered SDRAM DIMM 1 GB Registered SDRAM DIMM (36 pcs of 64 M 】 4 Components) PC100 SDRAM
HB52R1289E22 1 GB Registered SDRAM DIMM(1GB 寄存同步DRAM DIMM)
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HB52F328DC-75BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module
HB52F328EM-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
HB52F329EM-75B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256MB Unbuffered SDRAM DIMM
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