參數(shù)資料
型號(hào): HB52E168EN
廠商: Hitachi,Ltd.
英文描述: 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
中文描述: 64 MB的無(wú)緩沖SDRAM的內(nèi)存(64MB的未緩沖同步的DRAM內(nèi)存)
文件頁(yè)數(shù): 47/64頁(yè)
文件大?。?/td> 2741K
代理商: HB52E168EN
HB52E88EM-F, HB52E89EM-F, HB52E168EN-F, HB52E169EN-F
47
2. Same bank:
The consecutive write command from read with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank:
When some banks are in the active state, the second read command (another bank) is
executed. However, in case of a burst write, data will continue to be written until one clock before the read
command is executed. The internal auto-precharge of one bank starts at the next clock of the second com-
mand.
Write with Auto Precharge to Read Command Interval
(Different bank)
2. Same bank:
The consecutive read command from write with auto precharge (the same bank) is illegal.
It is necessary to separate the two commands with a bank active command.
Read command to Precharge command interval (same bank):
CK
Command
BA
Dout
Din
CL = 2
CL = 3
READ A
WRIT
in B0
in B1
in B2
in B3
Burst Length = 4
bank0
Read A
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
High-Z
CK
Command
BA
Dout
Din
WRIT A
READ
out B0
out B1
out B2
out B3
CE
Latency = 3
Burst Length = 4
bank0
Write A
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQMB
in A0
相關(guān)PDF資料
PDF描述
HB52E169EN 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E88EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E89EM 64 MB Unbuffered SDRAM DIMM(64MB 未緩沖同步DRAM DIMM)
HB52E169E12 128 MB Registered SDRAM DIMM(128 MB 寄存同步DRAM DIMM)
HB52E648EN 512 MB Unbuffered SDRAM DIMM(512 MB 未緩沖同步DRAM DIMM)
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