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參數(shù)資料
| 型號： | HB52D88GB-F |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 64 MB Unbuffered SDRAM Micro DIMM(64 MB 未緩沖同步DRAM DIMM) |
| 中文描述： | 64兆微型無緩沖SDRAM的內(nèi)存（64 MB的未緩沖同步的DRAM內(nèi)存） |
| 文件頁數(shù)： | 14/23頁 |
| 文件大?。?/td> | 94K |
| 代理商： | HB52D88GB-F |
HB52D88GB-F
14
DC Characteristics
(Ta = 0 to 65
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0 V)
HB52D88GB
-A6F/B6F/A6FL/B6FL
Parameter
Symbol Min
Max
Unit
Test conditions
Notes
Operating current
I
CC1
—
480
mA
Burst length = 1
t
RC
= min
CKE0 = V
IL
, t
CK
= 12 ns
CKE0 = V
IL
, t
CK
=
∞
1, 2, 3
Standby current in power down I
CC2P
Standby current in power down
(input signal stable)
—
12
mA
6
I
CC2PS
—
8
mA
7
Standby current in non power
down
I
CC2N
—
60
mA
CKE0,
S
= V
IH
,
t
CK
= 12 ns
CKE0,
S
= V
IH
,
t
CK
= 12 ns
CKE0,
S
= V
IH
,
t
CK
= 12 ns
t
CK
= min, BL = 4
t
RC
= min
V
IH
≥
V
– 0.2 V
V
IL
≤
0.2 V
4
Active standby current in power
down
I
CC3P
—
24
mA
1, 2, 6
Active standby current in non
power down
I
CC3N
—
140
mA
1, 2, 4
Burst operating current
I
CC4
I
CC5
I
CC6
—
480
mA
1, 2, 5
Refresh current
—
880
mA
3
Self refresh current
—
8
mA
8
Self refresh current
(L-version)
I
CC6
—
6.4
mA
Input leakage current
I
LI
I
LO
–10
10
μ
A
μ
A
0
≤
Vin
≤
V
CC
0
≤
Vout
≤
V
CC
DQ = disable
Output leakage current
–10
10
Output high voltage
V
OH
V
OL
2.4
—
V
I
OH
= –4 mA
I
OL
= 4 mA
Output low voltage
Notes: 1. I
depends on output load condition when the device is selected. I
CC
(max) is specified at the
output open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CK0/CK1 operating current.
7. After power down mode, no CK0/CK1 operating current.
8. After self refresh mode set, self refresh current.
—
0.4
V
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