參數(shù)資料
型號(hào): HAT3021R
廠商: Renesas Technology Corp.
英文描述: Silicon N/P Channel Power MOS FET Power Switching
中文描述: 硅N / P系列頻道功率MOS場(chǎng)效應(yīng)管電源開關(guān)
文件頁數(shù): 7/11頁
文件大小: 150K
代理商: HAT3021R
HAT3021R
Rev.2.00, Oct.06.2004, page 7 of 10
P Channel
4.0
3.0
2.0
1.0
0
50
100
150
200
10
1
0.1
1
10
100
–5.0
–2.5
0
–5
–10
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
0.01
100
V
GS
= -2.8 V
Tc = 75
°
C
25
°
C
25
°
C
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
-3.0 V
-4.5 V
-10 V
0.1
0.001
100
μ
PW = 10 ms (1shot)
Ta = 25
°
C
1 shot Pulse
10
μ
s
DC Operaton (PW
10 s)
this area is
limited by R
DS(on)
Operation in
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
–1000
–600
–800
–400
–200
0
–4
–8
–20
–12
–16
–0.1
–1
–10
100
10
I
D
= –2 A
–1 A
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
D
D
Drain Current I
D
(A)
S
D
)
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
Pulse Test
–0.5 A
V
GS
= –4.5 V
–10 V
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