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參數(shù)資料
| 型號： | HAT3021R |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N/P Channel Power MOS FET Power Switching |
| 中文描述： | 硅N / P系列頻道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 150K |
| 代理商： | HAT3021R |
HAT3021R
Rev.2.00, Oct.06.2004, page 2 of 10
Electrical Characteristics
(Ta = 25°C)
N Channel
Item
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
80
±20
—
—
1.0
—
—
4.2
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
90
100
7.0
400
57
24
7.3
1.1
1.3
6.0
4.0
39
3.5
0.83
30
Max
—
—
± 10
1
2.5
115
145
—
—
—
—
—
—
—
—
—
—
—
1.08
—
Unit
V
V
μ
A
μ
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 1.7 A, V
GS
= 10 V
Note4
I
D
= 1.7 A, V
GS
= 4.5 V
Note4
I
D
= 1.7 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
V
DD
= 25 V
V
GS
= 10 V
I
D
= 3.4 A
V
GS
= 10 V, I
D
= 1.7 A
V
DD
30 V
R
L
= 17.6
Rg = 4.7
IF = 3.4 A, V
GS
= 0
Note4
IF = 3.4 A, V
GS
= 0
diF/ dt = 100 A/
μ
s
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