參數(shù)資料
型號(hào)： HAT3010R
文件頁數(shù)： 9/11頁
文件大?。?/td> 61K
代理商： HAT3010R
–0.5
–0.4
–0.3
–0.2
–0.1
0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
–2
–4
–6
–8
–10
Pulse Test
–0.5 A
I = –2 A
–1 A
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
Case Temperature Tc (°C)
0
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–2 A, –1 A, –0.5 A
–4 V
V = –2.5 V
–0.5 A
I = –2 A
–1 A
F
f
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
–0.1 –0.2
–0.5
–1
–2
–5
–10
20
10
2
5
1
0.2
0.5
Tc = –25 °C
75 °C
25 °C
V = –10 V
Pulse Test
Drain Current I (A)
–10
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.02
0.05
0.01
–0.1 –0.2
–0.5
–1
–2
–5
Pulse Test
–4 V
V = –2.5 V
HAT3001F(P channele)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAT3010R_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N / P Channel Power MOS FET High Speed Power Switching
HAT3010R-EL-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N/P-CH 60V 6A/5A 8-Pin SOP T/R 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N/P-CH 60V 6A/5A 8-Pin SOP T/R
HAT3015R 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N/P Channel Power MOS FET High Speed Power Switching
HAT3015R-EL-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N/P Channel Power MOS FET High Speed Power Switching
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