參數(shù)資料
型號： HAT3010R
文件頁數(shù)： 10/11頁
文件大?。?/td> 61K
代理商： HAT3010R
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5
–1
–2
–5
–10
1000
200
500
100
20
50
10
di / dt = 20 A / μs
V = 0, Ta = 25 °C
0
–10
–20
–30
–40
0
Gate Charge Qg (nc)
D
D
0
–2
–4
–6
–8
–10
20
–50
G
G
Dynamic Input Characteristics
DS
V
GS
V
I = –2.5 A
4
8
12
16
V = –5 V
–10 V
–25 V
V = –25 V
–10 V
–5 V
Drain Current I (A)
S
Switching Characteristics
–0.1 –0.2
–0.5
–1
–2
–5
–10
500
200
100
20
50
10
5
tf
r
d(off)
t
d(on)
t
V = –4 V, V = –10 V
PW = 3 μs, duty < 1 %
0
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
V = 0
f = 1 MHz
–10
–20
–30
–40
–50
Ciss
Coss
Crss
HAT3001F(P channele)
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