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參數(shù)資料
| 型號(hào)： | HAT2204C-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管功率開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | HAT2204C-EL-E |
HAT2204C
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 4 of 7
100
80
60
40
20
25
0
25
50
75
100 125
150
0
0.3
0.1
3
30
100
100
30
10
3
1
0.3
0.1
1
10
Case Temperature Tc (°C)
Static Drain to Source On State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
F
25
°
C
Tc =
25
°
C
75
°
C
V
DS
= 10 V
Pulse Test
V
GS
= 1.8 V
Pulse Test
1, 1.8, 3.5 A
0
4
8
12
3000
1000
10000
100
300
40
0
8
30
6
20
4
10
2
4
8
12
16
20
0
1000
100
1
0.1
10
0.3
1
3
10
30
100
30
10
3
1
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 3.5 A
V
DD
V
GS
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
V
DD
= 12 V
10 V
5 V
td(on)
td(off)
tr
tf
3.5 A
2
6
10
0
0.4
0.8
1.2
1.6
2.0
20
8
V
GS
= 0 , -5 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
Pulse Test
4
12
16
I
D
= 3.5 A
4.5 V
5 V
2.5 V
1, 1.8 A
1.8 A
1 A
V
DD
= 12 V
10 V
5 V
相關(guān)PDF資料 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT2205C | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
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| HAT2206C | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
| HAT2206C-EL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
| HAT2207C | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Power Switching |
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