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參數(shù)資料
| 型號： | HAT2204C-EL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Unidirectional ESD protection for transient voltage suppression, SOD323 (UMD2; I-IEIA; URP), Tape reel SMD |
| 中文描述： | 硅?通道場效應(yīng)晶體管功率開關(guān) |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 141K |
| 代理商： | HAT2204C-EL-E |
HAT2204C
REJ03G0448-0500 Rev.5.00 May 10, 2007
Page 3 of 7
Main Characteristics
1.6
1.2
0.8
0.4
0
50
100
150
200
30
10
3
1
0.3
0.1
0.1 0.3
0.03
1
3
10
30
100
20
16
12
8
4
0
2
4
6
8
10
20
16
12
8
4
0
1
2
3
4
5
0.03
0.01
100
1.4 V
Tc = 75
°
C
25
°
C
25
°
C
P
Ambient Temperature Ta (°C)
Power vs.Temperature Dreating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
2.5 V
120
80
40
0
2
4
6
8
10
0.1
10
1
100
100
1000
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
Drain Current I
D
(A)
Drain to Source On State Resistance
vs. Drain Current
160
I
D
= 3.5 A
1.8 A
1 A
Pulse Test
V
GS
= 1.8 V
Pulse Test
1.8 V
Test condition
When using the glass epoxy
board.(FR4 40 x 40 x 1.6 mm)
4.5 V
1.6 V
V
GS
= 1.2 V
4.5 V
2.5 V
Ta = 25°C,1 shot pulse
When using the FR4 board.
DCOpeaion
10
μ
s
Operation in this
area is limited by
R
DS(on)
100
μ
s
s
m
0
1
=
W
P
s
m
1
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