參數(shù)資料
型號(hào): HAT1111C
廠商: Renesas Technology Corp.
英文描述: Silicon P Channel MOS FET Power Switching
中文描述: 硅P通道MOS FET的電源開關(guān)
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 153K
代理商: HAT1111C
HAT1111C
Rev.6.00 May 19, 2005 page 3 of 6
Main Characteristics
1.6
1.2
0.8
0.4
0
50
100
150
200
-30
-10
-3
-1
-0.3
-0.1
-0.1 -0.3
-0.03
-1
-3
-10 -30 -100
-10
-8
-6
-4
-2
0
-2
-4
-6
-8
-10
-10
-8
-6
-4
-2
0
-2
-4
-6
-8
-10
-0.03
-0.01
-100
Ta = 25°C,1shot pulse
When using the FR4 board.
-2.5 V
-3 V
Tc = 75
°
C
25
°
C
25
°
C
P
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
D
D
Typical Transfer Characteristics
V
DS
= -10 V
Pulse Test
s
m
1
s
m
0
1
=
W
P
10
μ
s
-600
-400
-200
0
-4
-8
-12
-16
-20
-0.01
-1
-0.1
-10
100
1000
10
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
D
D
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Drain Current
-800
I
D
= -2 A
-1 A
-0.5 A
Pulse Test
V
GS
= 10 V
Pulse Test
Operation in this
area is limited by
R
DS(on)
-3.5 V
100
μ
s
-10 V
V
GS
= -2 V
-4.5V
-4 V
-4.5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAT1111C-EL-E 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 2A 6-Pin CMFPAK T/R
HAT1126R 制造商:Renesas Electronics Corporation 功能描述:
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HAT1126RJ 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching
HAT1126RJ-EL-E 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R