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參數(shù)資料
| 型號(hào)： | HAT1111C |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel MOS FET Power Switching |
| 中文描述： | 硅P通道MOS FET的電源開關(guān) |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | HAT1111C |
Rev.6.00 May 19, 2005 page 1 of 6
HAT1111C
Silicon P Channel MOS FET
Power Switching
REJ03G0446-0600
Rev.6.00
May 19.2005
Features
Low on-resistance
R
DS(on)
= 245 m
typ. (at V
GS
= –10 V)
Low drive current.
4.5 V gate drive devices.
High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
1
23
654
G
D
S
1
6
5
D
2
D
3
D
4
Index band
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
Pch
Note 2
Tch
Tstg
Ratings
–60
–20 / +10
–2
–8
–2
1.25
150
–55 to +150
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. When using the glass epoxy board. (FR4 40
×
40
×
1.6mm), PW
≤
5 s, Ta = 25
°
C
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| HAT1111C-EL-E | Silicon P Channel MOS FET Power Switching |
| HAT1126R | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1126R-EL-E | Silicon P Channel Power MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1111C-EL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 2A 6-Pin CMFPAK T/R |
| HAT1126R | 制造商:Renesas Electronics Corporation 功能描述: |
| HAT1126R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R |
| HAT1126RJ | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1126RJ-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R |
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