參數(shù)資料
型號(hào)： HAF2001
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET Series(N溝道MOSFET)
中文描述： 硅N溝道場(chǎng)效應(yīng)晶體管系列（不適用溝道MOSFET的）
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 68K
代理商： HAF2001
HAF2001
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain current
I
D1
I
D2
V
(BR)DSS
10
—
—
A
V
GS
= 3.5 V, V
DS
= 10 V
V
GS
= 1.2 V, V
DS
= 10 V
I
D
= 10 mA, V
GS
= 0
Drain current
—
—
10
mA
Drain to source breakdown
voltage
60
—
—
V
Gate to source breakdown
voltage
V
(BR)GSS+
16
—
—
V
I
G
= 300 μA, V
DS
= 0
Gate to source breakdown
voltage
V
(BR)GSS–
–2.8
—
—
V
I
G
= –100 μA, V
DS
= 0
Gate to source leak current
I
GSS+ 1
I
GSS+ 2
I
GSS+ 3
I
GSS–
I
GS(op)1
I
GS(op)2
—
—
100
μA
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 4 V
I
D
= 10 A, V
GS
= 10 V
I
D
= 10 A
V
DS
= 10 V
V
= 10 V , V
GS
= 0
f = 1 MHz
—
—
50
μA
—
—
1
μA
—
—
–100
μA
Input current (shut down)
—
0.3
—
mA
—
0.1
—
mA
Zero gate voltage drain current I
DSS
Gate to source cut off voltage
—
—
250
μA
V
GS(off)
1.2
—
2.25
V
Static drain to source on state R
DS(on)
resistance
—
50
65
m
m
S
R
DS(on)
|y
fs
|
—
30
43
Forward transfer admittance
6
12
—
Output capacitance
Coss
—
630
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
7.5
—
μs
I
D
= 5 A
V
GS
= 5 V
R
L
= 6
Rise time
—
29
—
μs
Turn-off delay time
—
34
—
μs
Fall time
—
26
—
μs
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 20 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
—
110
—
ns
I
= 20 A, V
= 0,
diF/dt = 50 A/μs
Over load shut down operation t
os1
time*
Note
1. Including the junction temperature taise of the over loaded condition.
—
1.8
—
ms
V
GS
= 5 V, V
DD
= 12 V
V
GS
= 5 V, V
DD
= 24 V
1
t
os2
—
0.7
—
ms
相關(guān)PDF資料
PDF描述
HAF2002 Silicon N Channel MOS FET Series Power Switching
HAF2005 Silicon N Channel MOS FET Series Power Switching
HAF2007 Silicon N Channel MOS FET Series Power Switching
HAF2007L Silicon N Channel MOS FET Series Power Switching
HAF2007S Silicon N Channel MOS FET Series Power Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HAF2001-90 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching
HAF2001-90-E 制造商:Renesas Electronics Corporation 功能描述:
HAF2002 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching
HAF2002-90 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching
HAF2002-90-E 制造商:Renesas Electronics Corporation 功能描述:
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