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參數(shù)資料
| 型號： | HAF2001 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET Series(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管系列（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 68K |
| 代理商： | HAF2001 |
HAF2001
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS+
V
GSS–
I
D
I
D(pulse)
*
I
DR
Pch*
60
V
Gate to source voltage
16
V
Gate to source voltage
–2.8
V
Drain current
20
A
Drain peak current
1
40
A
Body to drain diode reverse drain current
20
A
Channel dissipation
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle < 1%
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Input voltage
V
IH
V
IL
I
IH
I
IL
I
I
I
IH(sd)1
I
IH(sd)2
Tsd
3.5
—
—
V
—
—
1.2
V
Input current
—
—
100
μA
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
(Gate non shut down)
—
—
50
μA
—
—
1
μA
Input current
—
0.3
—
mA
(Gate shut down)
—
0.1
—
mA
Shut down temperature
—
175
—
°C
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PDF描述 |
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| HAF2002 | Silicon N Channel MOS FET Series Power Switching |
| HAF2005 | Silicon N Channel MOS FET Series Power Switching |
| HAF2007 | Silicon N Channel MOS FET Series Power Switching |
| HAF2007L | Silicon N Channel MOS FET Series Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF2001-90 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2001-90-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF2002 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2002-90 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOSFET Series Power Switching |
| HAF2002-90-E | 制造商:Renesas Electronics Corporation 功能描述: |
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