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參數(shù)資料
| 型號： | H5N5007P |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 49K |
| 代理商： | H5N5007P |
H5N5001FM
4
Main Characteristics
40
30
20
10
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
10
30
100
300
1000
10
8
6
4
2
0
10
20
30
40
50
10
8
6
4
2
0
2
4
6
8
10
0.03
0.01
100
Ta = 25 °C
V = 4V
5 V
5.5 V
Tc = 75°C
25°C
–25°C
100μs
PW=10ms(1sho)
DCOpeaion(Tc=25C
this area is
limited by R
DS(on)
10μs
4.5 V
8 V
10 V
6 V
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
Pulse Test
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
V = 10 V
Pulse Test
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Operation in
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| H5N5007P-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P |
| H5N5011PL(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| H5N5012P-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5015P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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