參數(shù)資料
型號(hào): H5N5015P
文件頁(yè)數(shù): 1/10頁(yè)
文件大?。?/td> 49K
代理商: H5N5015P
H5N5001FM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1380 (Z)
1st. Edition
Mar. 2001
Features
Low on-resistance
Low leakage current
High speed switching : tf = 15ns typ (at V
GS
= 10 V, V
DD
= 250 V, I
D
= 2.5 A)
Low gate charge
: Qg = 15nC typ (at V
DD
= 400 V, V
GS
= 10 V, I
D
= 5 A)
Avalanche ratings
: R
DS(on)
=1.1
typ.
: I
DSS
=1
μ
A max (at V
DS
= 500 V)
Outline
123
TO–220FM
1. Gate
2. Drain
3. Source
D
G
S
相關(guān)PDF資料
PDF描述
H5N6001P
H5P0301SM
H7N0203AB Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching
H7N0308AB Datasheet|ADE-208-1569B|AUG.07.02|121K
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H5N5015P-E 制造商:Renesas Electronics Corporation 功能描述:
H5N5016PL 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N5016PL(E) 制造商:Renesas Electronics Corporation 功能描述:
H5N6001P 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:
H5N6001P_05 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching