參數(shù)資料
型號： H11B3
廠商： VISHAY SEMICONDUCTORS
元件分類： 光電耦合器
英文描述： Optocoupler DC-IN 1-CH Darlington With Base DC-OUT 6-Pin PDIP
中文描述： Transistor Output Optocouplers Photodarlington Out
文件頁數(shù)： 2/6頁
文件大?。?/td> 103K
代理商： H11B3
H11B1, H11B2, H11B3
Vishay Semiconductors
www.vishay.com
Rev. 1.7, 19-Oct-12
2
Document Number: 83609
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
V
ISO
5300
V
RMS
≥
7
≥
7
mm
mm
CTI
175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
P
tot
≥
10
12
≥
10
11
260
3.5
Ω
Ω
Total package dissipation (LED plus detector)
Derate linearly from 25 °C
Storage temperature
Operating temperature
Lead soldering time at 260 °C
mW
mW/°C
°C
°C
s
T
stg
T
amb
- 55 to + 150
- 55 to + 100
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
I
F
= 50 mA
H11B1
H11B2
H11B3
V
F
V
F
V
F
I
R
C
j
1.1
1.1
1.1
1.5
1.5
1.5
10
V
V
V
μA
pF
I
F
= 10 mA
V
R
= 3 V
V
F
= 0 V, f = 1 MHz
Reverse current
Junction capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
Saturation voltage collector-emitter
Capacitance (input to output)
50
I
C
= 1 mA, I
F
= 0 mA
I
E
= 100μA, I
F
= 0 mA
I
C
= 100 μA , I
F
= 0 mA
V
CE
= 10 V, I
F
= 0 mA
BV
CEO
BV
ECO
BV
CBO
I
CEO
30
7
30
V
V
V
nA
100
I
F
= 1 mA, I
C
= 1 mA
V
CEsat
C
IO
1
V
pF
0.5
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
H11B1
H11B2
H11B3
SYMBOL
CTR
DC
CTR
DC
CTR
DC
MIN.
500
200
100
TYP.
MAX.
UNIT
%
%
%
DC current transfer ratio
V
CE
= 5 V, I
F
= 1 mA
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
t
on
t
off
MIN.
TYP.
5
30
MAX.
UNIT
μs
μs
Switching times
I
F
= 5 mA, V
CE
= 10 V, R
L
= 100
Ω
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H11B3 制造商:Vishay Semiconductors 功能描述:OPTOCOUPLER
H11B3_Q 功能描述:晶體管輸出光電耦合器 DIP-6 PHOTO DARL RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
H11B3-004 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic
H11B3-009 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic
H11B3300 功能描述:晶體管輸出光電耦合器 Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
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