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參數(shù)資料
| 型號： | H11D2 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 光電耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | DIP-6 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 431K |
| 代理商： | H11D2 |
Document Number: 83611
Revision 17-August-01
www.vishay.com
2–82
FEATURES
CTR at
Good CTR Linearity with Forward
Current
Low CTR Degradation
Very High Collector-Emitter Breakdown Voltage
– H11D1/H11D2, BV
CER
– H11D3/H11D4, BV
CER
Isolation Test Voltage: 5300 V
Low Coupling Capacitance
High Common Mode Transient Immunity
Phototransistor Optocoupler in 6 Pin DIP
Package with Base Connection
Field Effect Stable: TRIOS*
VDE 0884 Available with Option 1
Underwriters Lab File #E52744
I
F
=10 mA, BV
CER
=10 V:
≥
20%
=300 V
=200 V
RMS
APPLICATIONS
Telecommunications
Replace Relays
DESCRIPTION
The H11D1/2/3/4 are optocouplers with very high
BV
CER
. They are intended for telecommunications
applications or any DC application requiring a high
blocking voltage.
The H11D1/D2 are identical and the H11D3/D4 are
identical.
*
TRIOS
—
TR
ansparent
IO
n
S
hield
D E
Maximum Ratings
Emitter
Reverse Voltage................................................................................6.0 V
DC Forward Current........................................................................60 mA
Surge Forward Current (t
≤
10 μs).................................................... 2.5 A
Total Power Dissipation............................................................... 100 mW
Detector
Collector-Emitter Voltage
H11D1/2 ......................................................................................300 V
H11D3 /4......................................................................................200 V
Collector-Base Voltage
H11D1/2 ......................................................................................300 V
H11D3 /4......................................................................................200 V
Emitter-Base Voltage.........................................................................7.0 V
Collector Current.......................................................................... 100 mA
Total Power Dissipation............................................................... 300 mW
Package
Isolation Test Voltage (between emitter and detector,
refer to climate DIN 50014, part 2, Nov. 74) ........................5300 V
Insulation Thickness between Emitter and Detector ..................
Creepage Distance.....................................................................
Clearance Distance....................................................................
Comparative Tracking Index
(per DIN IEC 112/VDE 0303, part 1)............................................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C.................................................................
V
IO
=500 V,
T
A
=100
°
C...............................................................
Storage Temperature Range..........................................–55
Operating Temperature Range......................................–55
Junction Temperature.....................................................................100
Soldering Temperature (max. 10 sec.,
dip soldering: distance to seating plane
T
A
=25
°
C
RMS
≥
≥
≥
0.4 mm
7.0 mm
7.0 mm
≥
≥
10
10
12
11
°
°
°
C
C
C
°
°
C to +150
C to +100
≥
1.5 mm) ...................260
°
C
.010 (.25)
typ.
.114 (2.90
.130 (3.0
.130 (3.30)
.150 (3.81)
.031 (0.80) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one ID
6
5
4
1
2
3
18
°
3
°
–
9
°
.300
–
.347
(7.62
–
8.81)
4
°
typ.
Dimensions in inches (mm)
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
Phototransistor
H11D1/H11D2/H11D3/H11D4
Phototransistor, 5.3 KV, TRIOS
High BV
CER
Optocoupler
Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H11D2.300-02 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| H11D2_Q | 功能描述:晶體管輸出光電耦合器 DIP-6 HV PHOTO TRAN RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D2300 | 功能描述:晶體管輸出光電耦合器 HV PHOTO TRAN RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D2300W | 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D23S | 功能描述:晶體管輸出光電耦合器 Optocoupler SM-DIP6 Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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