參數(shù)資料
型號: GTL2107PW
廠商: NXP Semiconductors N.V.
元件分類: 電壓/頻率轉(zhuǎn)換
英文描述: 12-bit GTL--GTL-GTL+ to LVTTL translator
封裝: GTL2107PW<SOT361-1 (TSSOP28)|<<http://www.nxp.com/packages/SOT361-1.html<1<Always Pb-free,;GTL2107PW<SOT361-1 (TSSOP28)|<<http://www.nxp.com/packages/SOT361-1.html<1&l
文件頁數(shù): 17/19頁
文件大小: 181K
代理商: GTL2107PW
GTL2107_5
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 23 December 2009
17 of 19
NXP Semiconductors
GTL2107
12-bit GTL
/GTL/GTL+ to LVTTL translator
17. Revision history
Table 17.
Document ID
GTL2107_5
Modifications:
Revision history
Release date
20091223
Section 2 “Features”
, 7
th
bullet item: changed from “200 V MM per JESD22-A115” to
“150 V MM per JESD22-A115”
Table 1 “Quick reference data”
: removed symbol/parameter “C
io
, input/output capacitance”
Table 12 “Static characteristics”
:
C
io
(A port) Typ value changed from “3.0 pF” to “5.0 pF”
C
io
(A port) Max value changed from “4.0 pF” to “-”
C
io
(B port) Typ value changed from “2.0 pF” to “4.0 pF”
C
io
(B port) Max value changed from “3.0 pF” to “-”
Table 13 “Dynamic characteristics”
:
(sub-section V
ref
= 0.73 V; V
TT
= 1.1 V) deleted t
PHZ
specification
(sub-section V
ref
= 0.73 V; V
TT
= 1.1 V) deleted t
PZH
specification
(sub-section V
ref
= 0.76 V; V
TT
= 1.2 V) deleted t
PHZ
specification
(sub-section V
ref
= 0.76 V; V
TT
= 1.2 V) deleted t
PZH
specification
Figure 8
title changed from “EN1 to 5A (I/O) or EN2 to 6A (I/O) or EN1 to nAO or EN2 to nAO”
to “EN2 to 5A (I/O) or 6A (I/O), or EN1 to nAO, or EN2 to nAO”
Deleted (old) Figure 11 “EN2 to 9AO”
Deleted (old) Figure 15 “Load circuit for 9AO OFF-state to LOW and LOW to OFF-state”
20070706
Product data sheet
20070129
Objective data sheet
20060926
Product data sheet
20060502
Product data sheet
Data sheet status
Product data sheet
Change notice
Supersedes
GTL2107_4
GTL2107_4
GTL2107_3
GTL2008_GTL2107_2
GTL2008_1
-
-
-
-
GTL2107_3
GTL2008_GTL2107_2
GTL2008_1
-
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