參數(shù)資料
型號: GS882V37AB-225
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 2.2 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 16/28頁
文件大?。?/td> 637K
代理商: GS882V37AB-225
GS882V37AB/D-250/225/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 7/2004
16/28
2002, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-250
-225
-200
Unit
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
4.4
5.0
ns
Clock to Output Valid
tKQ
2.0
2.2
2.5
ns
Clock to Output Invalid
tKQX
1.0
1.0
1.0
ns
Clock to Output in Low-Z
tLZ
1
1.0
1.0
1.0
ns
Setup time
tS
1.2
1.3
1.4
ns
Hold time
tH
0.2
0.3
0.4
ns
G to Output Valid
tOE
1.8
2.0
2.5
ns
G to output in High-Z
tOHZ
1
1.8
2.0
2.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
ns
Clock LOW Time
tKL
1.5
1.5
1.5
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.3
1.5
2.5
1.5
3.0
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
ns
ZZ recovery
tZZR
100
100
100
ns
相關(guān)PDF資料
PDF描述
GS882V37AB-225I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AB-250 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AB-250I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-200 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-200I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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