參數(shù)資料
型號: GS882V37AB-225
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 2.2 ns, PBGA119
封裝: PLASTIC, BGA-119
文件頁數(shù): 11/28頁
文件大小: 637K
代理商: GS882V37AB-225
GS882V37AB/D-250/225/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 7/2004
11/28
2002, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS882V37AB-225I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AB-250 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AB-250I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-200 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS882V37AD-200I 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
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