參數(shù)資料
型號(hào): GS881E18T-80
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 14 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 17/34頁(yè)
文件大?。?/td> 487K
代理商: GS881E18T-80
Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
17/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
AC Electrical Characteristics
Notes:
1.
2.
These parameters are sampled and are not 100% tested.
ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
Parameter
Symbol
-11
-11.5
-100
-80
-66
Unit
Min
10
1.5
Max
4.0
Min
10
1.5
Max
4.0
Min
10
1.5
Max
4.0
Min
12.5
1.5
Max
4.5
Min
15
1.5
Max
5
Pipeline
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
tKC
tKQ
tKQX
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKC
tKQ
tKQX
1.5
1.5
1.5
1.5
1.5
ns
Flow-
Thru
Clock Cycle Time
Clock to Output Valid
Clock to Output Invalid
15.0
3.0
11.0
15.0
3.0
11.5
15.0
3.0
12.0
15.0
3.0
14.0
20
3.0
18
ns
ns
ns
Clock to Output in Low-Z
tLZ
1
tKH
tKL
3.0
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
Clock LOW Time
1.7
2
1.7
2
2
2
2.3
2.5
ns
ns
2.2
2.2
Clock to Output in High-Z
tHZ
1
tOE
1.5
4.0
1.5
4.2
1.5
4.5
1.5
4.5
1.5
4.8
ns
G to Output Valid
4.0
4.2
4.5
4.5
4.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
0
0
ns
G to output in High-Z
tOHZ
1
tS
tH
4.0
4.2
4.5
4.5
4.8
ns
Setup time
Hold time
1.5
0.5
2.0
0.5
2.0
0.5
2.0
0.5
2.0
0.5
ns
ns
ZZ setup time
tZZS
2
5
5
5
5
5
ns
ZZ hold time
tZZH
2
tZZR
1
1
1
1
1
ns
ZZ recovery
20
20
20
20
20
ns
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