參數(shù)資料
型號: GS881E18T-80
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 14 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 11/34頁
文件大小: 487K
代理商: GS881E18T-80
Rev: 1.10 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
11/34
2000, Giga Semconductor, Inc.
Preliminary
GS881E18/36T-11/11.5/100/80/66
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagramshows only supported (tested) synchronous state transitions. The diagrampresumes G is tied low.
The upper portion of the diagramassumes active use of only the Enable (E1 and E2) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control
inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagramtogether assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS881E18T-80I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-100 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36BT-250IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BGT-250V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E18BT-150IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS881E18T-80I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E18T-V 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS881E32AD-133 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-133I 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-133IT 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs