參數(shù)資料
型號: GS88136
廠商: GSI TECHNOLOGY
英文描述: 8Mb(256K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 8MB的(256 × 36Bit)ByteSafe同步突發(fā)靜態(tài)存儲器(800萬位(256K × 36位)ByteSafe同步靜態(tài)隨機存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 10/33頁
文件大?。?/td> 463K
代理商: GS88136
Rev: 1.11 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
10/33
2000, Giga Semconductor, Inc.
Preliminary
GS88118/36T-11/11.5/100/80/66
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagramshows only supported (tested) synchronous state transitions. The diagrampresumes G is tied low.
The upper portion of the diagramassumes active use of only the Enable (E1and E2) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control
inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagramtogether assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關PDF資料
PDF描述
GS88118 8Mb(512K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位(512K x 18位)ByteSafe同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS881E18T 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-100I 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-11 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
GS881E36T-11.5 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
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