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參數(shù)資料
| 型號： | GS88118 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 8Mb（512K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 8MB的（為512k × 18位）ByteSafe同步突發(fā)靜態(tài)存儲器（800萬位（為512k × 18位）ByteSafe同步靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁數(shù)： | 8/33頁 |
| 文件大小： | 463K |
| 代理商： | GS88118 |
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Rev: 1.11 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
8/33
2000, Giga Semconductor, Inc.
Preliminary
GS88118/36T-11/11.5/100/80/66
Note:
There are pull-up devices on the LBO, DP and FT pins and a pull down device on the ZZ pin, so those input pins can be unconnected and the
chip will operate in the default states as specified in the above table.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Byte Write Truth Table
Notes:
1.
2.
3.
4.
All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
Byte Write Enable inputs B
A
, B
B
, B
C,
and/or B
D
may be used in any combination with BW to write single or multiple bytes.
All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
Bytes “
C
” and “
D
” are only available on the x36 version.
Function
GW
BW
B
A
B
B
B
C
B
D
Notes
Read
H
H
X
X
X
X
1
Read
H
L
H
H
H
H
1
Write byte a
H
L
L
H
H
H
2, 3
Write byte b
H
L
H
L
H
H
2, 3
Write byte c
H
L
H
H
L
H
2, 3, 4
Write byte d
H
L
H
H
H
L
2, 3, 4
Write all bytes
H
L
L
L
L
L
2, 3, 4
Write all bytes
L
X
X
X
X
X
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0]
A[1:0]
A[1:0]
A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0]
A[1:0]
A[1:0]
A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS881E18T | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-100I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-11 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-11.5 | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
| GS881E36T-11.5I | 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS88118AD-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS88118AD-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS88118AD-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS88118AD-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
| GS88118AD-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs |
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