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參數(shù)資料
| 型號(hào)： | GS880Z18CT-250IVT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 ZBT SRAM, QFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 804K |
| 代理商： | GS880Z18CT-250IVT |
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-250
-200
-150
Unit
0
to 70°C
–40
to
85°C
0
to 70°C
–40
to 85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/x36)
Pipeline
IDD
IDDQ
180
20
200
20
150
15
170
15
125
20
145
20
mA
Flow Through
IDD
IDDQ
140
15
160
15
125
15
145
15
110
15
130
15
mA
(x18)
Pipeline
IDD
IDDQ
165
10
185
10
140
10
160
10
115
10
135
10
mA
Flow Through
IDD
IDDQ
125
10
145
10
115
10
125
10
105
8
125
8
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
—
Pipeline
ISB
25
45
25
45
25
45
mA
Flow Through
ISB
25
45
25
45
25
45
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
—
Pipeline
IDD
45
65
45
65
40
60
mA
Flow Through
IDD
40
60
40
60
40
60
mA
GS880Z18/32/36CT-xxxV
Rev: 1.02a 12/2010
17/24
2010, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1. IDD and IDDQ apply to any combination of VDD1, VDD2, VDDQ1, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
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