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參數(shù)資料
| 型號(hào)： | GS8672Q38BE-500I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 2M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
| 文件頁數(shù)： | 8/29頁 |
| 文件大?。?/td> | 791K |
| 代理商： | GS8672Q38BE-500I |
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Operating Currents
Parameter
Symbol
Test Conditions
-500
-450
-400
Notes
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
0°
to
70°C
–40°
to
85°C
Operating Current (x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating Current (x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Standby Current (NOP):
DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V
or
≥ VDD – 0.2 V
TBD
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
GS8672Q20/38BE-500/450/400
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 4/2011
16/29
2011, GSI Technology
Preliminary
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