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參數(shù)資料

型號(hào)：	GS832136E-250V
廠商：	GSI TECHNOLOGY
元件分類：	DRAM
英文描述：	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
中文描述：	1M X 36 CACHE SRAM, 5.5 ns, PBGA165
封裝：	15 X 17 MM, 1 MM PITCH, FPBGA-165
文件頁(yè)數(shù)：	16/31頁(yè)
文件大小：	745K
代理商：	GS832136E-250V

AC Electrical Characteristics

Parameter

Symbol

-250

-225

-200

-166

-150

-133

Unit

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Pipeline

Clock Cycle Time

tKC

4.0

—

4.4

—

5.0

—

6.0

—

6.7

—

7.5

—

ns

Clock to Output Valid

tKQ

—

3.0

—

3.0

—

3.0

—

3.5

—

3.8

—

4.0

ns

Clock to Output Invalid

tKQX

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Clock to Output in Low-Z

tLZ

1

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Setup time

tS

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Hold time

tH

0.2

—

0.3

—

0.4

—

0.5

—

0.5

—

0.5

—

ns

Flow

Through

Clock Cycle Time

tKC

5.5

—

6.0

—

6.5

—

7.0

—

7.5

—

8.5

—

ns

Clock to Output Valid

tKQ

—

5.5

—

6.0

—

6.5

—

7.0

—

7.5

—

8.5

ns

Clock to Output Invalid

tKQX

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Clock to Output in Low-Z

tLZ

1

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Setup time

tS

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Hold time

tH

0.5

—

0.5

—

0.5

—

0.5

—

0.5

—

0.5

—

ns

Clock HIGH Time

tKH

1.3

—

1.3

—

1.3

—

1.3

—

1.5

—

1.7

—

ns

Clock LOW Time

tKL

1.7

—

1.7

—

1.7

—

1.7

—

1.7

—

2

—

ns

Clock to Output in

High-Z

tHZ

1

1.5

2.5

1.5

2.7

1.5

3.0

1.5

3.0

1.5

3.0

1.5

3.0

ns

G to Output Valid

tOE

—

2.5

—

2.7

—

3.0

—

3.5

—

3.8

—

4.0

ns

G to output in Low-Z

tOLZ

1

0

—

0

—

0

—

0

—

0

—

0

—

ns

G to output in High-Z

tOHZ

1

—

2.5

—

2.7

—

3.0

—

3.0

—

3.0

—

3.0

ns

ZZ setup time

tZZS

2

5

—

5

—

5

—

5

—

5

—

5

—

ns

ZZ hold time

tZZH

2

1

—

1

—

1

—

1

—

1

—

1

—

ns

ZZ recovery

tZZR

20

—

20

—

20

—

20

—

20

—

20

—

ns

GS832118/32/36E-xxxV

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.04 6/2006

16/31

2003, GSI Technology

Notes:

1.

2.

These parameters are sampled and are not 100% tested

ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

相關(guān)PDF資料	PDF描述
GS832136GE-133IV	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133V	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-150V	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-166IV	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-166V	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS832136GE-133	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133I	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133IV	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-133V	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS832136GE-150	制造商:GSI 制造商全稱:GSI Technology 功能描述:2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs

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