參數(shù)資料
型號(hào): GS8170DD36C-300
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁(yè)數(shù): 10/29頁(yè)
文件大?。?/td> 537K
代理商: GS8170DD36C-300
GS8170DD36C-333/300/250/200
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.03 1/2005
10/29
2002, GSI Technology, Inc.
It should be noted that deselection of the RAM via E2 and E3 also deselects the Echo Clock output drivers. The deselection of
Echo Clock drivers is always pipelined to the same degree as output data. Deselection of the RAM via E1 does not deactivate the
Echo Clocks.
In some applications it may be appropriate to pause between banks; to deselect both RAMs with E1 before resuming read
operations. An E1 deselect at a bank switch will allow at least one clock to be issued from the new bank before the first read cycle
in the bank. Although the following drawing illustrates a E1 read pause upon switching from Bank 1 to Bank 2, a write to Bank 2
would have the same effect, causing the RAM in Bank 2 to issue at least one clock before it is needed.
Echo Clock Control in Two Banks of Double Data Rate SigmaRAMs
QA0
QA1
QC0
QC1
QB0
QB1
QD0
QD1
Note: E1\ does not deselect the Echo Clock Outputs. Echo Clock outputs are synchronously deselected by E2 or E3 being sampled false.
CQ1 + CQ2
Read
Read
DQ
Bank 2
CQ
Bank 2
CQ
Bank 1
Read
DQ
Bank 1
Address
A
B
ADV
Read
Read
F
/E2 Bank 1
E2 Bank 2
C
D
E
CK
相關(guān)PDF資料
PDF描述
GS8170DD36C-300I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-333 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-333I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DW36AC 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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