參數(shù)資料
型號: GS8170DD36C-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
中文描述: 512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
封裝: 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù): 1/29頁
文件大小: 537K
代理商: GS8170DD36C-300
GS8170DD36C-333/300/250/200
18Mb
Σ
1x2Lp CMOS I/O
Double Data Rate SigmaRAM
200 MHz–333 MHz
1.8 V V
DD
1.8 V I/O
209-Bump BGA
Commercial Temp
Industrial Temp
Rev: 2.03 1/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
1/29
2002, GSI Technology, Inc.
Features
Double Data Rate Read and Write mode
Late Write; Pipelined read operation
JEDEC-standard SigmaRAM
pinout and package
1.8 V +150/–100 mV core power supply
1.8 V CMOS Interface
ZQ controlled user-selectable output drive strength
Dual Cycle Deselect
Burst Read and Write option
Fully coherent read and write pipelines
Echo Clock outputs track data output drivers
2 user-programmable chip enable inputs
IEEE 1149.1 JTAG-compliant Serial Boundary Scan
209-bump, 14 mm x 22 mm, 1 mm bump pitch BGA package
Pin-compatible with future 36Mb, 72Mb, and 144Mb
devices
SigmaRAM Family Overview
GS8170
DD
36 SigmaRAMs are built in compliance with the
SigmaRAM pinout standard for synchronous SRAMs. They
are 18,874,368-bit (18Mb) SRAMs. This family of wide, very
low voltage CMOS I/O SRAMs is designed to operate at the
speeds needed to implement economical high performance
networking systems.
Σ
RAMs are offered in a number of configurations including
Late Write, Double Late Write, and Double Data Rate (DDR).
The logical differences between the protocols employed by
these RAMs mainly involve various approaches to write
cueing and data transfer rates. The
Σ
RAM
family standard
allows a user to implement the interface protocol best suited to
the task at hand.
Functional Description
Because SigmaRAMs are synchronous devices, address data
inputs and read/write control inputs are captured on the rising
edge of the input clock. Write cycles are internally self-timed
and initiated by the rising edge of the clock input. This feature
eliminates complex off-chip write pulse generation required by
asynchronous SRAMs and simplifies input signal timing. In
DDR mode the device captures Data In on both rising and
falling edges of clock and drives data on both clock edges as
well.
Because the DDR
Σ
RAM always transfers data in two halves,
A0 is internally set to 0 for the first half of each read or write
transfer, and automatically incremented to 1 for the falling
edge transfer. The address field of a DDR
Σ
RAM is always
one address pin less than the advertised index depth (e.g., the
512k x 36 has a 512k addressable index).
Σ
RAMs support pipelined reads utilizing a rising-edge-
triggered output register. DDR
Σ
RAMs incorporate rising-
and falling-edge-triggered output registers. They also utilize a
Dual Cycle Deselect (DCD) output deselect protocol.
Σ
RAMs are implemented with high performance CMOS
technology and are packaged in a 209-bump BGA.
Parameter Synopsis
Key Fast Bin Specs
Symbol
- 333
Cycle Time
tKHKH
3.0 ns
Access Time
tKHQV
1.8 ns
相關(guān)PDF資料
PDF描述
GS8170DD36C-300I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-333 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DD36C-333I 18Mb ヒ1x2Lp CMOS I/O Double Data Rate SigmaRAM
GS8170DW36AC 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
GS8170DW36AGC-333I 18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
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