參數(shù)資料
型號: GS816272C
廠商: GSI TECHNOLOGY
英文描述: 256K x 72 18Mb Sync Burst SRAMs
中文描述: 256 × 72 35.7同步突發(fā)靜態(tài)存儲器
文件頁數(shù): 8/31頁
文件大?。?/td> 791K
代理商: GS816272C
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
GS816272C
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.18 11/2005
8/31
1999, GSI Technology
Simplified State Diagram with G
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參數(shù)描述
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GS816272CC-150V 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays