參數(shù)資料
型號(hào)： GS816272C
廠商： GSI TECHNOLOGY
英文描述： 256K x 72 18Mb Sync Burst SRAMs
中文描述： 256 × 72 35.7同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 11/31頁(yè)
文件大?。?/td> 791K
代理商： GS816272C
GS816272C
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 2.18 11/2005
11/31
1999, GSI Technology
50% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Note:
These parameters are sample tested.
AC Test Conditions
Parameter
Conditions
V
DD
– 0.2 V
0.2 V
1 V/ns
V
DD
/2
V
DDQ
/2
Fig. 1
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Notes:
1.
2.
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted.
Device is deselected as defined by the Truth Table.
3.
DQ
V
DDQ/2
50
30pF
*
Output Load 1
* Distributed Test Jig Capacitance
= 2.5 V)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS816272C200 制造商:GSI 功能描述:New
GS816272CC-150 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-150I 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 2.5V/3.3V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-150IV 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
GS816272CC-150V 制造商:GSI Technology 功能描述:SRAM SYNC OCTAL 1.8V/2.5V 18MBIT 256KX72 7.5NS/3.8NS 209FBGA - Trays
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