參數(shù)資料
型號: FS75R17KE3
廠商: INFINEON TECHNOLOGIES AG
元件分類: IGBT 晶體管
英文描述: IGBT-Module
中文描述: 130 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-35
文件頁數(shù): 5/8頁
文件大小: 316K
代理商: FS75R17KE3
5
Technische Information / technical information
FS75R17KE3
IGBT-Module
IGBT-modules
prepared by: Martin Wlz
approved by: Wilhelm Rusche
date of publication: 2003-8-20
revision: 2.0
Vorlufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
Eóò = f (R), Eó = f (R)
V = ±15 V, I = 75 A, V = 900 V, TY = 125°C
R []
E
0
5
10
15
20
25
30
35
40
80
70
60
50
40
30
20
10
0
Eóò
Transienter Wrmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
Zúì = f (t)
t [s]
Z
0,001
0,01
0,1
1
10
0,01
0,1
1
Zúì : IGBT
i:
rí[K/W]:
í[s]:
τ
1
0,027
0,01
2
0,081
0,04
3
0,108
0,06
4
0,054
0,3
Sicherer Rückwrts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I = f (V)
V = ±15 V, Ró = 6,8 , TY = 125°C
V [V]
I
0
200
400
600
800 1000 1200 1400 1600 1800
160
140
120
100
80
60
40
20
0
I, Modul
I, Chip
Durchlakennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
I = f (V)
V [V]
I
0,0
0,5
1,0
1,5
2,0
2,5
3,0
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
TY = 25°C
TY = 125°C
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