參數(shù)資料
型號(hào): FS75R17KE3
廠商: INFINEON TECHNOLOGIES AG
元件分類(lèi): IGBT 晶體管
英文描述: IGBT-Module
中文描述: 130 A, 1700 V, N-CHANNEL IGBT
封裝: MODULE-35
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 316K
代理商: FS75R17KE3
3
Technische Information / technical information
FS75R17KE3
IGBT-Module
IGBT-modules
prepared by: Martin Wlz
approved by: Wilhelm Rusche
date of publication: 2003-8-20
revision: 2.0
Vorlufige Daten
preliminary data
Modul / module
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min
V¥
3,4
kV
Material Modulgrundplatte
material of module baseplate
Cu
Material für innere Isolation
material for internal insulation
AIè0é
Kriechstrecke
creepage distance
Kontakt - Kühlkrper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
10,0
10,0
mm
Luftstrecke
clearance distance
Kontakt - Kühlkrper / terminal to heatsink
Kontakt - Kontakt / terminal to terminal
7,50
7,50
mm
Vergleichszahl der Kriechwegbildung
comparative tracking index
CTI
> 225
min.
typ.
max.
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
0,009
K/W
Modulinduktivitt
stray inductance module
21
nH
Modulleitungswiderstand,
Anschlüsse - Chip
module lead resistance,
terminals - chip
T = 25°C, pro Schalter / per switch
Róó
1,80
m
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
TY èà
150
°C
Temperatur im Schaltbetrieb
temperature under switching conditions
TY ó
-40
125
°C
Lagertemperatur
storage temperature
Tùú
-40
125
°C
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Schraube / screw M5
M
3,00
-
6,00
Nm
Gewicht
weight
G
300
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
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