參數(shù)資料
型號： FQPF13N10
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V N-Channel MOSFET
中文描述： 8.7 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220F, 3 PIN
文件頁數(shù)： 2/10頁
文件大小： 883K
代理商： FQPF13N10
Rev. B, September 2002
F
2002 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.3mH, I
= 12.5A, V
DD
= 50V, R
= 25
,
Starting T
= 25°C
3. I
≤
13.4A, di/dt
≤
200A/
μ
s, V
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
500
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.48
--
V/°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
V
GS
= 10 V, I
D
= 6.25 A
--
0.33
0.43
V
DS
= 50 V, I
D
= 6.25 A
--
10
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1800
245
25
2300
320
35
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 250 V, I
D
= 13.4 A,
R
G
= 25
--
--
--
--
--
--
--
40
140
100
85
45
11
22
90
290
210
180
60
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 400 V, I
D
= 13.4 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
12.5
50
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 12.5 A
V
GS
= 0 V, I
S
= 13.4 A,
dI
F
/ dt = 100 A/
μ
s
290
2.6
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
相關(guān)PDF資料
PDF描述
FQPF14N15 150V N CHANNEL MOSFET
FQPF14N30 300V N-Channel MOSFET
FQPF15P12 120V P-Channel MOSFET
FQP15P12 120V P-Channel MOSFET
FQPF16N15 150V N CHANNEL MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF13N10L 功能描述:MOSFET 100V N-Ch QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF13N50 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF13N50C 功能描述:MOSFET 500V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF13N50C_F105 制造商:Fairchild 功能描述:500V/13A N-CH MOSFET C-SERIES
FQPF13N50C_G 制造商:Fairchild 功能描述:500V/13A N-CH MOSFET C-SERIES
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*