參數(shù)資料
型號： FQP15P12
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 120V P-Channel MOSFET
中文描述： 15 A, 120 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/10頁
文件大?。?/td> 852K
代理商： FQP15P12
2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
F
QF E T
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
-15A, -120V, R
DS(on)
= 0.2
@V
GS
= -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175
°
C maximum junction temperature rating
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP15P12
FQPF15P12
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
-120
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
-15
-10.6
-60
-15 *
-10.6 *
-60 *
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
1157
-15
10
-5.0
(Note 2)
(Note 1)
(Note 1)
(Note 3)
100
0.67
41
0.27
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +175
T
L
300
°C
Symbol
R
θ
JC
R
θ
JS
R
θ
JA
Parameter
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
▲
!
D
!
!
!
!
●
●
S
G
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相關代理商/技術參數(shù)
參數(shù)描述
FQP16N15 功能描述:MOSFET 150V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP16N25 功能描述:MOSFET 250V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP16N25C 功能描述:MOSFET 250V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP16N25C_F105 制造商:Fairchild 功能描述:250V/16A N-CH MOSFET C-SERIES
FQP16N25C_Q 功能描述:MOSFET 250V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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