- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375890 > FQP15P12 (FAIRCHILD SEMICONDUCTOR CORP) 120V P-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FQP15P12 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 120V P-Channel MOSFET |
| 中文描述： | 15 A, 120 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 852K |
| 代理商： | FQP15P12 |
Rev. A, December 2003
2003 Fairchild Semiconductor Corporation
F
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
Bottom : -4.5 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
-
D
,
-V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
10
2
175
o
C
25
o
C
-55
o
C
※
Notes :
1. V
DS
= -40V
2. 250
μ
s Pulse Test
-
D
,
-V
GS
, Gate-Source Voltage [V]
0
20
40
60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
GS
= -20V
V
GS
= -10V
※
Note : T
J
= 25
R
D
Ω
D
-I
D
, Drain Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
-1
10
0
10
1
175
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
-
D
,
-V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
-V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
0
2
4
6
8
10
12
V
DS
= -60V
V
DS
= -30V
V
DS
= -96V
※
Note : I
D
= -15A
-
G
,
Q
G
, Total Gate Charge [nC]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQPF16N15 | 150V N CHANNEL MOSFET |
| FQPF16N25 | 250V N-Channel MOSFET |
| FQPF17N08L | 80V LOGIC N-Channel MOSFET |
| FQPF17N08 | GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, WHITE |
| FQPF17P10 | 100V P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQP16N15 | 功能描述:MOSFET 150V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP16N25 | 功能描述:MOSFET 250V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP16N25C | 功能描述:MOSFET 250V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQP16N25C_F105 | 制造商:Fairchild 功能描述:250V/16A N-CH MOSFET C-SERIES |
| FQP16N25C_Q | 功能描述:MOSFET 250V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。