參數(shù)資料
型號: FQP9N90C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 900V N-Channel MOSFET
中文描述: 8 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 3/10頁
文件大小: 842K
代理商: FQP9N90C
Rev. A, September 2003
F
2003 Fairchild Semiconductor Corporation
Typical Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
GS
V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 50V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
Ω
D
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0
2
4
6
8
10
12
V
DS
= 450V
V
DS
= 180V
V
DS
= 720V
Note : I
D
= 9A
V
G
,
Q
G
, Total Gate Charge [nC]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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