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參數(shù)資料
| 型號： | FQA10N80C_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 800V N-Channel MOSFET |
| 中文描述： | 10 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, TO-3P, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 804K |
| 代理商： | FQA10N80C_NL |
4
www.fairchildsemi.com
FQA10N80C Rev. A1
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250 μA
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
= 10 V
2. I
D
= 5.0 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limted by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
12
I
D
,
T
C
, Case Temperature [ ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
1. Z
(t) = 0.52
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
/W Max.
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, Square W ave Pulse D uration [sec]
t
1
P
DM
t
2
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