參數(shù)資料
型號(hào)： FQA10N80C_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 800V N-Channel MOSFET
中文描述： 10 A, 800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, TO-3P, 3 PIN
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 804K
代理商： FQA10N80C_NL
2
www.fairchildsemi.com
FQA10N80C Rev. A1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17.3mH, I
AS
=10A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
10A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQA10N80C
FQA10N80C
TO-3P
--
--
30
FQA10N80C
FQA10N80C_F109
TO-3PN
--
--
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
800
--
--
V
Breakdown Voltage Temperature Coefficient
I
D
= 250
μ
A, Referenced to 25°C
--
0.98
--
V/°C
Zero Gate Voltage Drain Current
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
10
μ
A
--
--
100
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 5.0A
V
DS
= 50 V, I
D
= 5.0A
(Note 4)
3.0
--
5.0
V
Static Drain-Source On-Resistance
--
0.93
1.1
Forward Transconductance
--
5.8
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
2150
2800
pF
Output Capacitance
--
180
230
pF
Reverse Transfer Capacitance
--
15
20
pF
t
d(on)
Turn-On Delay Time
V
DD
= 400 V, I
D
= 10.0A,
R
G
= 25
(Note 4, 5)
--
50
110
ns
t
r
Turn-On Rise Time
--
130
270
ns
t
d(off)
Turn-Off Delay Time
--
90
190
ns
t
f
Turn-Off Fall Time
--
80
170
ns
Q
g
Total Gate Charge
V
DS
= 640 V, I
D
= 10.0A,
V
GS
= 10 V
(Note 4, 5)
--
45
58
nC
Q
gs
Gate-Source Charge
--
13.5
--
nC
Q
gd
Gate-Drain Charge
--
17
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
10.0
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
40.0
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
=10.0 A
V
GS
= 0 V, I
S
= 10.0 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
730
--
ns
Reverse Recovery Charge
--
10.9
--
μ
C
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